BSS123 - N-Channel ENHANCEMENT MODE MOSFET

Product Overview

Bruckewell

Datasheet Details

Part number	BSS123
Manufacturer	Bruckewell
File Size	377.80 KB
Description	N-Channel ENHANCEMENT MODE MOSFET
Datasheet	BSS123 Datasheet
Additional preview pages of the BSS123 datasheet.

Product details

Description

These N-Channel enhancement mode field effect transistors uses advanced trench technology.These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as: Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications

Features

Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
High Drain-Source Voltage Rating.
RoHS compliant package Mechanical Data.
Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.
Moisture Sensitivity: Level 1 per J-STD-020.
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe(Lead Free Plating). Solderable per MIL-STD-202, Method 208.

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Published: Jul 8, 2019 |