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BS616LV4010 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit

Description

BS616LV4010 Very low operation voltage : 2.7 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100n

Features

  • S Very Low Power/Voltage CMOS SRAM 256K X 16 bit.

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Datasheet Details

Part number BS616LV4010
Manufacturer Brilliance Semiconductor
File Size 227.39 KB
Description Very Low Power/Voltage CMOS SRAM 256K X 16 bit
Datasheet download datasheet BS616LV4010 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616LV4010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V •Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV4010 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.7V to 3.
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