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BM4953 - Dual P-Channel MOSFET

Description

BM4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number BM4953
Manufacturer Bookly
File Size 347.43 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet BM4953 Datasheet

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Full PDF Text Transcription

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 DESCRIPTION BM4953 Dual P Channel Enhancement Mode MOSFET -5.0A BM4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, LCD-TV , LCD- Monitor and other battery powered circuits. PIN CONFIGURATION SOP-8 FEATURE z -30V/-5.0A, RDS(ON) = 65mΩ @VGS =-10V z -30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0V z -30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.
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