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2SC3875 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 60 50 5 150 30 150 125
-55 to +125
Unit V V V mA mA
mW OC OC
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7/15/2011
Characteristics at Tamb=25 OC
Parameter
Symbol
Min.
Typ.
Max.
C3875 Datasheet
