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B4953 - Dual P-Channel 30-V (D-S) MOSFET

Description

The B4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-5.3A, RDS(ON)=60mΩ@VGS=-10V -30V/-4.2A, RDS(ON)=90mΩ@VGS=-4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current Capability SOP-8 Package.

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Datasheet Details

Part number B4953
Manufacturer BiTEK
File Size 61.87 KB
Description Dual P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet B4953 Datasheet

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Full PDF Text Transcription

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B4953 Dual P-Channel 30V (D-S) MOSFET General Description The B4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration Features -30V/-5.3A, RDS(ON)=60mΩ@VGS=-10V -30V/-4.2A, RDS(ON)=90mΩ@VGS=-4.
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