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B3450 - N-Channel 30-V (D-S) MOSFET

Description

The B3450 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)=28mΩ@VGS=10V RDS(ON)=42mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package.

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Datasheet Details

Part number B3450
Manufacturer BiTEK
File Size 56.53 KB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet B3450 Datasheet

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Full PDF Text Transcription

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N- Channel 30-V (D-S) MOSFET B3450 General Description The B3450 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration SD SD SD GD Features RDS(ON)=28mΩ@VGS=10V RDS(ON)=42mΩ@VGS=4.
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