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BR50N06 - N-CHANNEL MOSFET

Features

  • Low RDS(on),low gate charge,low Crss,fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 60 V ID(Tc=25℃) 50 A ID(Tc=100℃) 35.4 A IDM 200 A VGS ±20 V EAS 490 mJ EAR 12 mJ PD(Tc=25℃) 120 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=60V VDS=48V VGS=0V TC=150℃ IGSS VGS=±20V VDS=0V VGS(th) VDS=VGS ID=250μA Qg VDS=48V ID=50A VGS=10V RDS(on) VGS=10V ID=25A VSD.

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Datasheet Details

Part number BR50N06
Manufacturer BLUE ROCKET ELECTRONICS
File Size 245.93 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet BR50N06 Datasheet

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Full PDF Text Transcription

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BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :：、DC/DC 、。 Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :RDS(on)，，Crss ，。 Features: Low RDS(on),low gate charge,low Crss,fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 60 V ID(Tc=25℃) 50 A ID(Tc=100℃) 35.
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