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BCR191 - Silicon PNP transistor

Features

  • With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCEO -50 V VCBO -50 V VEBO -10 V Vi(on) -30 V IC -100 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO VCB=-40V IE=0 IEBO VEB=-10V IC=0 hFE VCE=-5.0V IC=-5.0mA VCE(sat) IC=-10mA IB=-0.5mA Vi(off) VCE=-5.0V IC=-100μA Vi(on) VCE=-0.3V IC=-2.0.

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Datasheet Details

Part number BCR191
Manufacturer BLUE ROCKET ELECTRONICS
File Size 223.03 KB
Description Silicon PNP transistor
Datasheet download datasheet BCR191 Datasheet

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Full PDF Text Transcription

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BCR191(3RA191) PNP /SILICON PNP DIGITAL TRANSISTOR :、、。 Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. :，，。 Features: With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCEO -50 V VCBO -50 V VEBO -10 V Vi(on) -30 V IC -100 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO VCB=-40V IE=0 IEBO VEB=-10V IC=0 hFE VCE=-5.0V IC=-5.0mA VCE(sat) IC=-10mA IB=-0.5mA Vi(off) VCE=-5.0V IC=-100μA Vi(on) VCE=-0.3V IC=-2.0mA fT VCE=-5.0V IC=-10mA f=100MHz Ccb VCB=-10V f=1.
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