BL25N60 - Power MOSFET

Description

the avalanche energy.

general purpose applications.

Features

Fast Switching.
Low Crss (typical 20pF ).
100% avalanche tested.
Improved dv/dt capability.
RoHS product.

BELLING

📥 Download Datasheet

Datasheet Details

Part number	BL25N60
Manufacturer	BELLING
File Size	1.34 MB
Description	Power MOSFET
Datasheet	BL25N60 Datasheet
Additional preview pages of the BL25N60 datasheet.

📁 Similar Datasheet

BL250N04-3DL8 - N-Channel Enhancement Mode MOSFET (GME)
BL25664AA - 512MB / 1GB / 2GB (x64) UNBUFFERED DDR2 SDRAM DIMM (ETC)
BL2000 - UIT BL2000 Hardware installation and maintenance guide (UIT)
BL2000 - Single Board Computer (Z-World)
BL2002A - Display (Bolymin)
BL2002A1 - DISPLAY (Bolymin)
BL2002AW - DISPLAY (Bolymin)
BL2002B - Display (Bolymin)
BL2004A - PLED (Bolymin)
BL2004A1 - DISPLAY (Bolymin)

Other Datasheets by BELLING

BL2513A - USB dedicated charging port (DCP) controller
BL2513M - USB dedicated charging port (DCP) controller
BL2514A - USB dedicated charging port (DCP) controller
BL2514M - USB dedicated charging port (DCP) controller
BL2553 - Precision Load Switch
BL2554 - Adjustable USB Load Current Switch
BL2555 - 1CH ADJ Current-Limited Power Distribution Switch
BL2556 - 1A USB Load Current Switch

Full PDF Text Transcription

Click to expand full text

BL25N60 Power MOSFET 1．Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 600 V ID 25 A RDS(ON).Typ 0.21 Ω Qg.

Published: Aug 26, 2025 |