1N5711
Description
/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace.
Features
- Low Turn-On Voltage As Low as 0.34 V at 1 m A
- Pico Second Switching Speed
- High Breakdown Voltage Up to 70 V
- Matched Characteristics Available
Outline 15
0.41 (.016)- 0.36 (.014)
Maximum Ratings
Junction Operating and Storage Temperature Range 1N5711, 1N5712, 5082-2800/10/11 -65°C to +200°C 5082-2835 -60°C to +150°C DC...
