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CM3415 - P-Channel 20V Power MOSFET

Description

Applications CM3415 is the P-Channel enhancement mode power field

effect transistors with high cell density, trench technology.

Personal Digital Assistants This high density process and design have been optimized Portable Instrumentation switchin

Features

  • Marking Information.
  • VDS: -20V.
  • ID: -4.3A.
  • RDSON (@VGS=-4.5V) : < 49mΩ.
  • RDSON (@VGS=-2.5V) : < 62mΩ.
  • RDSON (@VGS=-1.8V) : < 100mΩ.
  • High density cell design for extremely low RDSON.
  • Excellent on-resistance and DC current capability Equivalent Circuit and Pin Configuration 3DXX Marking Code = 3D Date Code = XX Ordering Information SOT-23 (Top View) Part Number Packaging CM3415 3000/Tape & Reel Reel Size 7 inch Absolute Maximum Ratings (TA=25 ℃ unless o.

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Datasheet Details

Part number CM3415
Manufacturer Applied Power Microelectronics
File Size 1.19 MB
Description P-Channel 20V Power MOSFET
Datasheet download datasheet CM3415 Datasheet

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Full PDF Text Transcription

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CM3415 P-Channel 20V (D-S) Power MOSFET Description Applications CM3415 is the P-Channel enhancement mode power field  Cellular Handsets and Accessories effect transistors with high cell density, trench technology.  Personal Digital Assistants This high density process and design have been optimized  Portable Instrumentation switching performance and especially tailored to minimize  Load switch on-state resistance. Features Marking Information  VDS: -20V  ID: -4.3A  RDSON (@VGS=-4.5V) : < 49mΩ  RDSON (@VGS=-2.5V) : < 62mΩ  RDSON (@VGS=-1.
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