AM2301PE
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
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- - Low r DS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology
PRODUCT SUMMARY VDS (V) r DS(on) (OHM) 0.130 @ VGS = -4.5V -20 0.190 @ VGS = -2.5V
ID (A) -2.6 -2.1
ESD Protected
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS -20 Drain-Source Voltage V VGS ±8 Gate-Source Voltage
.Data Sheet.co.kr o
Continuous Drain Current Pulsed Drain Current b a
TA=25 C TA=70 C o o
ID IDM
-2.6 -1.5 -10 ±1.6 1.25 0.8 A W...
