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HMC8205BF10 - Power Amplifier

Description

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz.

No external matching is required to achieve full band operation.

Features

  • High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Supply voltage: VDD = 50 V at 1300 mA 10-lead LDCC package.

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Full PDF Text Transcription

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Data Sheet FEATURES High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Supply voltage: VDD = 50 V at 1300 mA 10-lead LDCC package APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure Test and measurement equipment GENERAL DESCRIPTION The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10. 0.
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