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HMC7950 - GaAs pHEMT MMIC Low Noise Amplifier

Description

The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC).

The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz.

Features

  • Output power for 1 dB compression (P1dB): 16 dBm typical.
  • Saturated output power (PSAT): 19.5 dBm typical.
  • Gain: 15 dB typical.
  • Noise figure: 2.0 dB typical.
  • Output third-order intercept (IP3): 26 dBm typical.
  • Supply voltage: 5 V at 64 mA.
  • 50 Ω matched input/output.

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Data Sheet HMC7950 2 GHz to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier FEATURES ► Output power for 1 dB compression (P1dB): 16 dBm typical ► Saturated output power (PSAT): 19.5 dBm typical ► Gain: 15 dB typical ► Noise figure: 2.0 dB typical ► Output third-order intercept (IP3): 26 dBm typical ► Supply voltage: 5 V at 64 mA ► 50 Ω matched input/output APPLICATIONS ► Test instrumentation ► Military and space FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.
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