Datasheet4U Logo Datasheet4U.com

HMC784AMS8GE - GaAs MMIC 10 WATT T/R SWITCH

Description

The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels.

The device can control signals from DC to 4 GHz.

Features

  • Input P1dB: +40 dBm @ Vdd = +8V High Third Order Intercept: +60 dBm Positive Control: +3 to +8 V Low Insertion Loss: 0.3 dB MSOP8G Package: 14.8 mm2 General.

📥 Download Datasheet

📁 Similar Datasheet

  • HMC707LP5 - 6-Bit Digital Variable Gain Amplifier (Hittite Microwave Corporation)
  • HMC707LP5E - 6-Bit Digital Variable Gain Amplifier (Hittite Microwave Corporation)
  • HMC708LP5 - 6-Bit Digital Variable Gain Amplifier (Hittite Microwave Corporation)
  • HMC708LP5E - 6-Bit Digital Variable Gain Amplifier (Hittite Microwave Corporation)
  • HMC712 - Voltage Variable Attenuator Chip (Hittite Microwave Corporation)
  • HMC712LP3CE - Voltage Variable Attenuator SMT (Hittite Microwave Corporation)
  • HMC713LP3E - LOGARITHMIC DETECTOR / CONTROLLER (Hittite Microwave Corporation)
  • HMC714LP5 - Dual RMS Power Detector (Hittite Microwave Corporation)
  • HMC714LP5E - Dual RMS Power Detector (Hittite Microwave Corporation)
  • HMC716LP3 - Low Noise Amplifier SMT (Hittite Microwave Corporation)
Other Datasheets by Analog Devices

Full PDF Text Transcription

Click to expand full text
HMC784AMS8GE v01.0117 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz SWITCHES - SPDT - SMT Typical Applications The HMC784AMS8GE is ideal for: • Cellular/4G Infrastructure • WiMAX, WiBro & Fixed Wireless • Automotive Telematics • Mobile Radio • Test Equipment Functional Diagram Features Input P1dB: +40 dBm @ Vdd = +8V High Third Order Intercept: +60 dBm Positive Control: +3 to +8 V Low Insertion Loss: 0.3 dB MSOP8G Package: 14.8 mm2 General Description The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias.
Published: |