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HMC735LP5 - MMIC VCO

Description

The HMC735LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO.

Features

  • Dual Output: Fo = 10.5 - 12.2 GHz Fo/4 = 2.625 - 3.05 GHz Pout: +17 dBm Phase Noise: -100 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm2 General.

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Full PDF Text Transcription

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v03.0609 Typical Applications The HMC735LP5(E) is ideal for: • Point-to-Point/Multi-Point Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 HMC735LP5 / 735LP5E MMIC VCO w/ DIVIDE-BY-4 10.5 - 12.2 GHz Features Dual Output: Fo = 10.5 - 12.2 GHz Fo/4 = 2.625 - 3.05 GHz Pout: +17 dBm Phase Noise: -100 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm2 General Description The HMC735LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC735LP5(E) integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.
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