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HMC669LP3E - GaAs PHEMT MMIC

Download the HMC669LP3E datasheet PDF. This datasheet also covers the HMC669LP3 variant, as both devices belong to the same gaas phemt mmic family and are provided as variant models within a single manufacturer datasheet.

Description

The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC.

Features

  • The HMC669LP3(E) is ideal for: Noise Figure: 1.4 dB.
  • Cellular/3G and LTE/WiMAX/4G Output IP3: +29 dBm.
  • BTS & Infrastructure Gain: 17 dB.
  • Repeaters and Femtocells Failsafe Operation:.
  • Tower Mounted Amplifiers.
  • Test & Measurement Equipment LETE Functional Diagram Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm QFN Package: 9 mm2 General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC669LP3-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Amplifiers - Low Noise - SMT 7 7-1 HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Typical Applications Features The HMC669LP3(E) is ideal for: Noise Figure: 1.4 dB • Cellular/3G and LTE/WiMAX/4G Output IP3: +29 dBm • BTS & Infrastructure Gain: 17 dB • Repeaters and Femtocells Failsafe Operation: • Tower Mounted Amplifiers • Test & Measurement Equipment LETE Functional Diagram Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm QFN Package: 9 mm2 General Description The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.
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