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HMC637ALP5E - GaAs pHEMT MMIC 1-WATT POWER AMPLIFIER

Description

The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz.

Features

  • P1dB output power: 29 dBm Gain: 13 dB Output IP3: 44 dBm 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2.

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Full PDF Text Transcription

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Data Sheet GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz HMC637ALP5E FEATURES P1dB output power: 29 dBm Gain: 13 dB Output IP3: 44 dBm 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 APPLICATIONS Telecom infrastructure Microwave radio Very small aperture terminal (VSAT) Military and space Test instrumentation Fiber optics GENERAL DESCRIPTION The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply.
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