Datasheet4U Logo Datasheet4U.com

HMC530LP5 - MMIC VCO

Description

Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

and feature half frequency and divide-by-4 outputs.

Features

  • Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5 x 5 mm SMT Package: 25 mm² General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMC536LP2 GaAs MMIC POSITIVE CONTROL T/R SWITCH Hittite Microwave
HMC536LP2E GaAs MMIC POSITIVE CONTROL T/R SWITCH Hittite Microwave
HMC516 GaAs PHEMT MMIC LOW NOISE AMPLIFIER Hittite Microwave Corporation
HMC517 GaAs PHEMT MMIC LOW NOISE AMPLIFIER Hittite Microwave Corporation
HMC519 GaAs PHEMT MMIC LOW NOISE AMPLIFIER Hittite Microwave Corporation

Other Datasheets by Analog Devices

Part Number Description
HMC530LP5E MMIC VCO
HMC531LP5 MMIC VCO
HMC531LP5E MMIC VCO
HMC532LP4 MMIC VCO
HMC532LP4E MMIC VCO

Full PDF Text Transcription

Click to expand full text
HMC530LP5 / 530LP5E v07.0411 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram Features Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5 x 5 mm SMT Package: 25 mm² General Description The HMC530LP5 & HMC530LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5 & HMC530LP5E integrate resona- tors, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.
Published: |