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HMC529LP5 - MMIC VCO

Description

The HMC529LP5 & HMC529LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC529LP5 & HMC529LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.

Features

  • Dual Output: Fo = 12.4 - 13.4 GHz Fo/2 = 6.2 - 6.7 GHz Pout: +8 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram 8 General.

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Full PDF Text Transcription

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HMC529LP5 / 529LP5E v04.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 12.4 - 13.4 GHz Typical Applications Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: • VSAT Radio • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • Military End-Use Features Dual Output: Fo = 12.4 - 13.4 GHz Fo/2 = 6.2 - 6.7 GHz Pout: +8 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram 8 General Description The HMC529LP5 & HMC529LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC529LP5 & HMC529LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.
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