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HMC506LP4E - MMIC VCO

Download the HMC506LP4E datasheet PDF. This datasheet also covers the HMC506LP4 variant, as both devices belong to the same mmic vco family and are provided as variant models within a single manufacturer datasheet.

Description

The HMC506LP4 & HMC506LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers.

Features

  • Pout: +14 dBm Phase Noise: -103 dBc/Hz @100 KHz No External Resonator Needed Single Supply: +3V @ 77 mA QFN Leadless SMT Package, 16 mm2 General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC506LP4-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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HMC520 GaAs MMIC I/Q MIXER Hittite Microwave
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Other Datasheets by Analog Devices

Part Number Description
HMC506LP4 MMIC VCO
HMC500LP3 GaAs HBT VECTOR MODULATOR
HMC500LP3E GaAs HBT VECTOR MODULATOR
HMC504LC4B GaAs HEMT MMIC LOW NOISE AMPLIFIER
HMC505LP4 MMIC VCO

Full PDF Text Transcription

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v01.0805 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • VSAT Radio • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • Military End-Use Functional Diagram 11 HMC506LP4 / 506LP4E MMIC VCO w/ BUFFER AMPLIFIER, 7.8 - 8.7 GHz Features Pout: +14 dBm Phase Noise: -103 dBc/Hz @100 KHz No External Resonator Needed Single Supply: +3V @ 77 mA QFN Leadless SMT Package, 16 mm2 General Description The HMC506LP4 & HMC506LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 7.8 to 8.7 GHz, the VCO’s phase noise performance is excellent over temperature, shock and vibration due to the oscillator’s monolithic structure.
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