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HMC416LP4 - MMIC VCO

Description

The HMC416LP4 & HMC416LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers.

Features

  • Pout: +4.5 dBm Phase Noise: -114 dBc/Hz @100 k Hz No External Resonator Needed Single Supply: 3V @ 37 mA QFN Leadless SMT Package, 16 mm2 General.

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Full PDF Text Transcription

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v02.0805 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military Functional Diagram 11 HMC416LP4 / 416LP4E MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Features Pout: +4.5 dBm Phase Noise: -114 dBc/Hz @100 k Hz No External Resonator Needed Single Supply: 3V @ 37 mA QFN Leadless SMT Package, 16 mm2 General Description The HMC416LP4 & HMC416LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 2.75 to 3.0 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.
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