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HMC408LP3E - GaAs InGaP HBT MMIC 1WATT POWER AMPLIFIER

Download the HMC408LP3E datasheet PDF (HMC408LP3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gaas ingap hbt mmic 1watt power amplifier.

Description

The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 dBm P1dB.

The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage.

Features

  • Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC408LP3_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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v03.0705 11 Typical Applications The HMC408LP3 / HMC408LP3E is ideal for: • 802.11a & HiperLAN WLAN • UNII & Point-to-Point / Multi-Point Radios • Access Point Radios Functional Diagram HMC408LP3 / 408LP3E GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Features Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package General Description The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components.
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