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HMC385LP4 - MMIC VCO

Description

The HMC385LP4 & HMC385LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers.

Features

  • Pout: +4.5 dBm Phase Noise: -115 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 35 mA QFN Leadless SMT Package, 16 mm2 General.

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Full PDF Text Transcription

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v02.0705 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military 11 Functional Diagram HMC385LP4 / 385LP4E MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz Features Pout: +4.5 dBm Phase Noise: -115 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 35 mA QFN Leadless SMT Package, 16 mm2 General Description The HMC385LP4 & HMC385LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 2.25 to 2.5 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.
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