Datasheet4U Logo Datasheet4U.com

HMC-MDB277 - GaAs MMIC FUNDAMENTAL MIXER

Description

The HMC-MDB277 is a passive Double Balanced MMIC Mixer which utilizes GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology and can be used as either an upconverter or a downconverter.

Features

  • Wide IF bandwidth: DC - 18 GHz Passive Double Balanced Topology LO Input Power: +14 dBm Die Size: 1.55 x 1.4 x 0.1 mm Functional Diagram General.

📥 Download Datasheet

📁 Similar Datasheet

  • HMC-ALH102 - GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH244 - GaAs HEMT MMIC LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH313 - GaAs HEMT MMIC LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH369 - GaAs HEMT MMIC LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH376 - GaAs HEMT MMIC LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH382 - GaAs HEMT LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH444 - GaAs HEMT MMIC LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH445 - GaAs HEMT MMIC LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
  • HMC-ALH508 - Low Noise Amplifier Chip (Hittite Microwave Corporation)
  • HMC-ALH509 - GaAs HEMT LOW NOISE AMPLIFIER (Hittite Microwave Corporation)
Other Datasheets by Analog Devices

Full PDF Text Transcription

Click to expand full text
MIXERS - DOUBLE - BALANCED- CHIP v02.0813 Typical Applications This HMC-MDB277 is ideal for: • Short Haul / High Capacity Radios • FCC E-Band Communication Systems • Automotive Radar • Sensors • Test & Measurement Equipment HMC-MDB277 GaAs MMIC FUNDAMENTAL MIXER, 70 - 90 GHz Features Wide IF bandwidth: DC - 18 GHz Passive Double Balanced Topology LO Input Power: +14 dBm Die Size: 1.55 x 1.4 x 0.1 mm Functional Diagram General Description The HMC-MDB277 is a passive Double Balanced MMIC Mixer which utilizes GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology and can be used as either an upconverter or a downconverter. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation.
Published: |