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HMC-C582 - Ultra Wideband Power Amplifier

Description

The HMC-C582 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transfer (pHEMT) power amplifier in a miniature, hermetic module with replaceable SMA connectors that operates between 0.01 GHz and 20 GHz.

Features

  • High gain: 24 dB P1dB output power: 25 dBm, typical Single 15 V supply Hermetically sealed Field replaceable SMA connector.
  • 40°C to +75°C operating temperature range.

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Datasheet Details

Part number HMC-C582
Manufacturer Analog Devices
File Size 207.68 KB
Description Ultra Wideband Power Amplifier
Datasheet download datasheet HMC-C582 Datasheet
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Data Sheet FEATURES High gain: 24 dB P1dB output power: 25 dBm, typical Single 15 V supply Hermetically sealed Field replaceable SMA connector −40°C to +75°C operating temperature range APPLICATIONS Telecommunications infrastructure Microwave radios and VSATs Military and space Test and measurement instrumentation Fiber optics 0.01 GHz to 20 GHz, Ultra Wideband Power Amplifier Module HMC-C582 FUNCTIONAL BLOCK DIAGRAM +15V RF IN RF OUT HMC-C582 GND Figure 1. 13786-001 GENERAL DESCRIPTION The HMC-C582 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transfer (pHEMT) power amplifier in a miniature, hermetic module with replaceable SMA connectors that operates between 0.01 GHz and 20 GHz.
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