Datasheet4U Logo Datasheet4U.com

BLP27M810 - Power LDMOS transistor

Description

10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM) applications at frequencies from HF to 2700 MHz.

The BLP27M810 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Designed for broadband operation (HF to 2700 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Datasheet preview – BLP27M810

Datasheet Details

Part number BLP27M810
Manufacturer Ampleon
File Size 428.73 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP27M810 Datasheet
Additional preview pages of the BLP27M810 datasheet.

📁 Similar Datasheet

Other Datasheets by Ampleon

Full PDF Text Transcription

Click to expand full text
BLP27M810 Power LDMOS transistor Rev. 1 — 11 February 2016 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM) applications at frequencies from HF to 2700 MHz. The BLP27M810 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package. Table 1. Typical performance RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C in a class-AB application circuit. Test signal f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) CW 2450 100 32 10 18.4 50.6 Pulsed CW 2700 110 28 2 17 19 1.
Published: |