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BLP05M7200
Power LDMOS transistor
Rev. 5 — 27 June 2017
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit.
Test signal
f
VDS
PL(AV)
(MHz)
(V) (W)
CW 440 28 210
Gp (dB) 21
D (%) 81
1.2 Features and benefits
High efficiency Excellent ruggedness Excellent thermal stability Integrated ESD protection Easy power control Designed for ISM operation (425 MHz to 450 MHz) Input integration for simple board design Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.
BLP05M7200 Datasheet
