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BLL9G1214LS-600 - LDMOS L-band radar power transistor

Download the BLL9G1214LS-600 datasheet PDF. This datasheet also covers the BLL9G1214L-600 variant, as both devices belong to the same ldmos l-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for L-band operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLL9G1214L-600-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLL9G1214LS-600
Manufacturer Ampleon
File Size 485.01 KB
Description LDMOS L-band radar power transistor
Datasheet download datasheet BLL9G1214LS-600 Datasheet

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Full PDF Text Transcription

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BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev. 1 — 27 November 2017 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(3dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 1.2 to 1.4 32 600 19 60 1.
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