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FIGB25N120TDG - IGBT

General Description

Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and sweasy parallel operation.

Key Features

  • ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V @ I C = 25A and TC = 25 C ƽ Extremely enhanced avalanche capability.

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Datasheet Details

Part number FIGB25N120TDG
Manufacturer American First Semiconductor
File Size 1.23 MB
Description IGBT
Datasheet download datasheet FIGB25N120TDG Datasheet

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IGBT General Description Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and sweasy parallel operation. Features ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V @ I C = 25A and TC = 25 C ƽ Extremely enhanced avalanche capability Application ƽ Power switch circuit of induction cooker(IH). FIGB25N120TDG PIN Connection TO-3P/TO-247AD G CE VCES IC Ptot TC=25℃ VCE(SAT) 1200 V 25 A 320 W 2.