AA028P1-00 Datasheet 27-29 GHz GaAs MMIC Power Amplifier

Manufacturer: Alpha Industries

AA028P1-00 27-29 ghz gaas mmic power amplifier by Alpha Industries - Datasheet Preview

Datasheet Details

Part number	AA028P1-00
Manufacturer	Alpha Industries
File Size	139.01 KB
Description	27-29 GHz GaAs MMIC Power Amplifier
Datasheet	AA028P1-00 Datasheet

General Description

Alpha’s two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10% power added efficiency at 28 GHz.

The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Overview

27–29 GHz GaAs MMIC Power Amplifier AA028P1-00.

Key Features

I Single Bias Supply Operation (6 V) I 22 dBm Typical P1 dB Output Power at 28 GHz I 13.5 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.329 0.000 0.000 0.519 2.784 3.400 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

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