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AOTL022V65X2 - 650V Silicon Carbide Power MOSFET

Features

  • Proprietary αSiC MOSFET technology.
  • Low loss, with low RDS,(ON).
  • Fast switching with low RG and low capacitance.
  • Optimized gate drive voltage (VGS = 15V).
  • Low reverse recovery diode (Qrr).

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Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS,(ON) • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15V) • Low reverse recovery diode (Qrr) Applications Renewable • EV Charger • Solar Inverters Industrial • UPS • SMPS • Motor Drives Pin Configuration AOTL022V65X2 650V αSiC Silicon Carbide Power MOSFET Product Summary VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 400V 100 % UIS Tested 650V 120A 22mΩ 70nC 22µJ D PIN1(G) S K PIN1(G) Ordering Part Number AOTL022V65X2 Package Type TOLL Form Tape & Reel Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Symbol VDS VGS, MAX VGS,OP,TRANS VGS,OP ID IDM EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Maximum Gate-Source Voltage Max Transient(A) Recommended Ope
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