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AOM060V65X2 650V αSiC Silicon Carbide Power MOSFET
Features
• Proprietary αSiC MOSFET technology • Low RDS(ON) increase with temperature • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15V) • Ultra-fast and low reverse recovery diode (Qrr)
Applications
• Power Supplies • EV Charging • Solar Inverters • Motor Drives
• Energy Storage • UPS
• Industrial
Pin Configuration
Top View
Product Summary
VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 400 V 100% UIS Tested
650V 90A 60mΩ 51nC 12µJ
Bottom View
D (1)
(1) (2)(3)(4)
Ordering Part Number AOM060V65X2
Package Type TO-247-4L
Form Tube
Absolute Maximum Ratings
(TA = 25°C, unless otherwise noted)
Symbol VDS VGS, MAX VGS,OP,TRANS VGS,OP
ID
IDM EAS PD TJ, TSTG TL
Parameter
Drain-Source Voltage
Maxi
AOM060V65X2 Datasheet
