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AOM033V120X2 1200 V αSiC Silicon Carbide Power MOSFET
Features
• Proprietary αSiCTM MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS = 15V) for broad driver
compatibility • Robust body diode and low Qrr
Applications
Renewable • EV Charger • Solar Inverters
Industrial • UPS • SMPS • Motor Drives
Pin Configuration
Top View
Product Summary
VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 800V 100% UIS Tested
Bottom View
1200V 120A 33mΩ 226nC 63µJ
D (1)
(1) (2)(3)(4)
Ordering Part Number AOM033V120X2
Package Type TO-247-4L
Form Tube
Absolute Maximum Ratings
(TA = 25°C, unless otherwise noted)
Symbol VDS VGS, MAX VGS,OP,TRANS VGS,OP
ID
IDM EAS PD TJ, TSTG TL
Parameter
Drain-Source Voltage
Maximum
Gate-Source Voltage
Max Transient(A)
Recom
AOM033V120X2 Datasheet
