Datasheet4U Logo Datasheet4U.com

AOM015V65X2 - 650V Silicon Carbide Power MOSFET

Features

  • Proprietary αSiC MOSFET technology.
  • Low RDS(ON) increase with temperature.
  • Fast switching with low RG and low capacitance.
  • Optimized gate drive voltage (VGS = 15V).
  • Ultra-fast and low reverse recovery diode (Qrr).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOM080S5R LIQUID CRYSTAL DISPLAY AZ Displays
AOM121S Liquid Crystal Display AZ Displays
AOM12832A0-2.23WW OLED ORIENT DISPLAY
AOM12864A0-0.96WW OLED ORIENT DISPLAY
AOM12864A0-0.96WW-ANO OLED ORIENT DISPLAY

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOM015V75X2Q 750V Silicon Carbide Power MOSFET
AOM020V120X3Q 1200V Silicon Carbide Power MOSFET
AOM025V120X3Q 1200V Silicon Carbide Power MOSFET
AOM033V120X2 1200V Silicon Carbide Power MOSFET
AOM033V120X2Q Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOM015V65X2 650V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low RDS(ON) increase with temperature • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15V) • Ultra-fast and low reverse recovery diode (Qrr) Applications • Power Supplies • EV Charging • Solar Inverters • Motor Drives • Energy Storage • UPS • Industrial Pin Configuration Top View Product Summary VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 400V 100% UIS Tested 650V 200A 15mΩ 211nC 36µJ Bottom View D (1) (1) (2)(3)(4) G (4) K (3) S (2) Ordering Part Number AOM015V65X2 Package Type TO-247-4L Form Tube Shipping Quantity 30/Tube Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Symbol VDS VGS, MAX VGS,OP,TRANS VGS,OP ID IDM EAS PD
Published: |