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AOD406 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Key Features

  • es VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.0mΩ (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-252 Top View D D-PAK Bottom View D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C G Current B,G TC=100°C B ID Pulsed Drain Current IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipati.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.0mΩ (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-252 Top View D D-PAK Bottom View D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C G Current B,G TC=100°C B ID Pulsed Drain Current IDM Avalanche Current C IAR Repetitive avalanche energy L=0.