Datasheet4U Logo Datasheet4U.com

AOD2916 - N-Channel MOSFET

General Description

The AOD2916 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.

📥 Download Datasheet

Full PDF Text Transcription for AOD2916 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOD2916. For precise diagrams, and layout, please refer to the original PDF.

AOD2916 100V N-Channel MOSFET General Description The AOD2916 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switch...

View more extracted text
uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 25A < 34mΩ < 43.