Description
The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
Features
- n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V)
p-channel -20V
-0.6A (VGS=-4.5V)
RDS(ON)
RDS(ON)
< 300mΩ (VGS=4.5V) < 550mΩ (VGS=-4.5V)
< 350mΩ (VGS=2.5V) < 700mΩ (VGS=-2.5V)
< 450mΩ (VGS=1.8V) < 950mΩ (VGS=-1.8V)
SC-70-6 (SOT-323) Top View
D1 D2 GG
S1 1 6 G1 2 5 D2 3 4
D1 G2 S2
S1
n-channel
S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain
TA=25°C
Current.
AO7600 Datasheet
