AO5600E
Description
The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical.
-Ro HS pliant -AO5600EL is Halogen Free
ESD PROTECTED!
Features n-channel VDS (V) = 20V, ID = 0.6A (VGS=4.5V) RDS(ON)< 0.65Ω (VGS= 4.5V) RDS(ON)< 0.75Ω (VGS= 2.5V) RDS(ON)< 0.95Ω (VGS= 1.8V) p-channel VDS (V) = -20V, ID = -0.5A (VGS=-4.5V) RDS(ON)< 0.8Ω (VGS= -4.5V) RDS(ON)< 1.0Ω (VGS= -2.5V) RDS(ON)< 1.3Ω (VGS= -1.8V)
S1 G1
D2
SC-89-6
D1 G2 S2
D1 1
G1 G2 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel Max p-channel
Drain-Source Voltage
VDS 20
-20
Gate-Source Voltage
±8
Continuous Drain TC=25°C
0.6 -0.5
Current B,H
TC=100°C
0.4 -0.38
Pulsed Drain Current B
IDM 3
-1
Power...
