AO4902
Description
The AO4902 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory. Standard Product .. AO4902 is Pb-free (meets ROHS & Sony 259 specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical.
Features
VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D1 D2 K1 K2
S2/A2 G2 S1/A1 G1
1 2 3 4
8 7 6 5
D2/K2 D2/K2 D1/K1 D1/K1
G1 S1
A1 G2 S2
A2
SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current
MOSFET 30 ±12 6.9 5.8 40
Schottky
Units V V A
VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM...
