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AO4817 - Dual P-Channel MOSFET

General Description

The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

The device is ESD protected.

Key Features

  • VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 21mΩ (VGS = -10V) ESD Rating: 1.5KV HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 www. DataSheet4U. com G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±25 -8 -6.9 -40 2 1.44 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM P.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4817 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4817 is Pb-free (meets ROHS & Sony 259 specifications). AO4817L is a Green Product ordering option. AO4817 and AO4817L are electrically identical. Features VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 21mΩ (VGS = -10V) ESD Rating: 1.5KV HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 www.DataSheet4U.