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AO4404 - N-Channel MOSFET

General Description

The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.3mH B PD IAR EAR Junct.

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4404B 30V N-Channel MOSFET
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AO4402G 20V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO4404 and AO4404L are electrically identical. -RoHS Compliant -AO4404L is Halogen Free Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.