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AS4C64M16D1A-6TIN - 1Gb SDRAM

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Alliance Semiconductor

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AS4C64M16D1A-6TIN 1Gb SDRAM by Alliance Semiconductor - Datasheet Preview — Datasheet preview – AS4C64M16D1A-6TIN

Datasheet Details

Part number	AS4C64M16D1A-6TIN
Manufacturer	Alliance Semiconductor
File Size	1.48 MB
Description	1Gb SDRAM
Datasheet	AS4C64M16D1A-6TIN Datasheet
Additional preview pages of the AS4C64M16D1A-6TIN datasheet.

Product details

Description

Table 2.

Features

Overview.
Fast clock rate: 166MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 16M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte write mask control.
DM Write Latency.

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Published: Oct 13, 2019 |