• Part: AS4C1M16F5
  • Description: 5V 1M x 16 CMOS DRAM
  • Manufacturer: Alliance Semiconductor
  • Size: 633.55 KB
Download AS4C1M16F5 Datasheet PDF
Alliance Semiconductor
AS4C1M16F5
Features - Organization: 1,048,576 words × 16 bits - High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time - Low power consumption - Active: 880 m W max (AS4C1M16F5-60) - Standby: 11 m W max, CMOS DQ - Fast page mode - 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh - Read-modify-write - TTL-patible, three-state DQ - JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 - 5V power supply - Industrial and mercial temperature available Pin arrangement Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 DQ7 DQ8 NC NC WE RAS NC NC A0 A1 A2 A3 Vcc Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .D w w w Pin designation Pin(s) TSOP 2 Description 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 DQ16 DQ15 DQ14 DQ13 DQ12...