• Part: AS7C251MNTF18A
  • Description: 2.5V 1M x 18 Flowthrough Synchronous SRAM
  • Manufacturer: Alliance Semiconductor Corporation
  • Size: 478.21 KB
Download AS7C251MNTF18A Datasheet PDF
Alliance Semiconductor Corporation
AS7C251MNTF18A
Features - - - - - - - - Organization: 1,048,576 words × 18 bits NTD™ architecture for efficient bus operation Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous output enable control Available in 100-pin TQFP package - - - - - - - Individual byte write and global write Clock enable for operation hold Multiple chip enables for easy expansion 2.5V core power supply Self-timed write cycles Interleaved or linear burst modes Snooze mode for standby operation .. Logic block diagram A[19:0] 20 D Address register burst logic CLK CE0 CE1 CE2 R/W BWa BWb ADV / LD LBO ZZ Q 20 Write delay addr. registers Control logic Write Buffer 1M x 18 SRAM array DQ [a,b] Data Q input register 18 18 18 18 CLK CEN OE Output buffer 18 OE DQ [a,b] Selection guide -75 Minimum cycle time Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby...