AM2305
DESCRIPTION
The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance.
FEATURES
- -
- - -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Available in a SOT-23 package.
These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. AM2305 is available in a SOT-23 package.
APPLICATION
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- High Frequency Point-of-Load Synchronous New working DC-DC Power System Load Switch
ORDERING INFORMATION
.Data Sheet.co.kr
P CHANNEL MOSFET
Package Type SOT-23 Note E3
Part Number AM2305E3R AM2305E3VR
R: Tape & Reel V: Green Package...
