• Part: 1N5711
  • Description: Schottky Barrier Diodes
  • Category: Diode
  • Manufacturer: Agilent Technologies
  • Size: 48.46 KB
Download 1N5711 Datasheet PDF
Agilent Technologies
1N5711
Features - Low Turn-On Voltage As Low as 0.34 V at 1 m A - Pico Second Switching Speed - High Breakdown Voltage Up to 70 V - Matched Characteristics Available Description /Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace. The 5082-2300 Series and 5082-2900 devices are unpassivated Schottky diodes in a glass package. These...