NE64535 - NPN SILICON LOW NOISE RF TRANSISTOR

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Description

The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz.

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Datasheet Details

Part number	NE64535
Manufacturer	Advanced
File Size	18.84 KB
Description	NPN SILICON LOW NOISE RF TRANSISTOR
Datasheet	NE64535 Datasheet
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NE64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. PACKAGE STYLE .085 4L SQ FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • S21E2 = 11 dB Typical @ 2 GHz • Hermetic Ceramic Package MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C O -65 °C to +200 °C -65 °C to +150 °C 85 °C/W TC = 25 °C 1 = Collector 2 & 4 = Emitter 3 = Base ORDER CODE: ASI10752 CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21E NF GA 2 TEST CONDITIONS VCB = 8 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 10 V VCE = 8 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA MINIMUM TYPICAL MAXIMUM 100 1.

Published: May 7, 2005 |