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BLY93C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY93C is Designed for Class C, 28 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• Common Emitter • PG = 9.0 dB at 25 W/175 MHz • Omnigold™ Metalization System
E B
C D E H I
C E
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W
DIM A B C D E F G H I J
F
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11
.240 / 6.10
.255 / 6.
BLY93C Datasheet
