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BAM120
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM120 is Designed to operate in a collector modulated VHF
Power Amplifier Applications up to 150 MHz.
PACKAGE STYLE .500 4L FLG
FEATURES:
• ηC = 65 % typ. @ 120 W/150 MHz • PG = 9.0 dB typ. @ 120 W/150 MHz • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCES VEBO PDISS TJ TSTG θJC 12 A 60 V 4.0 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.2 °C/W
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1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
ee DataSh
ORDER CODE: ASI10430
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO hFE COB PG ηC VCC = 27 V IC = 20 mA IC = 50 mA IE = 5.0 mA VCE = 25 V VCE = 27 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60 32 4.0
UNITS
V V V
IC = 3.5 A f = 1.
BAM120 Datasheet
